In Czochralski (CZ) growth technique crystals are grown by slow pulling of a seed/wire/ capillary from the free surface of the melt of the material to be grown into crystal contained in a crucible. A growth station, to contain crucible and minimizes heat losses (by conduction and radiation), is made using appropriate ceramic tubes, felts, and wools. The shape of the crystal can be determined by controlling the diameter of the growing crystal through optimization of the melt temperature and pull rate depending on properties of the material under consideration. This technology can be used to grow oxide single crystals of Al2O3, Y3Al5O12 for various applications like scintillator, laser host, gem stone etc.
In Czochralski technique crystals are grown by slow pulling of a seed/wire/ capillary from the free surface of a melt of the material contained in a crucible. A growth station, to contain crucible and minimizes heat losses (by conduction and radiation), is made using appropriate ceramic tubes, felts, and wools. The shape of the crystal can be determined by controlling the diameter of the growing crystal through the manipulation of the melt temperature and pull rate depending on properties of the material under consideration.
This technology is to grow single crystal of Al2O3 and Y3Al5O12 of 25 mm dia and 75 mm length.
In Czochralski technique crystals are grown by slow pulling of a seed/wire/ capillary from the free surface of a melt of the material contained in a crucible. A growth station, to contain crucible and minimizes heat losses (by conduction and radiation), is made using appropriate ceramic tubes, felts, and wools. The shape of the crystal can be determined by controlling the diameter of the growing crystal through the manipulation of the melt temperature and pull rate depending on properties of the material under consideration.
This technology is to grow single crystal of Al2O3 and Y3Al5O12 of 25 mm dia and 75 mm length.
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