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RF/Microwave Substrates
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RF/Microwave Substrates

Developed RF/Microwave substrate
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Flexible microwave substrates are extensively used for variety of high end microwave circuit applications such as high power solid state amplifiers, patch antennas, mobile base stations etc. Although large volume of these materials is being used for strategic applications in the country, the requirement is fully met through imports. Understanding the importance of indigenization of these strategic materials, DAE developed a dimensionally stable, planar and isotropic PTFE/ceramic composite laminates. Excellent RF performance was obtained in terms of output power, gain and efficiency during system level evaluation.

RF/Microwave Substrates

Developed RF/Microwave substrate
Detail Technical Brochure

Flexible microwave substrates are extensively used for variety of high end microwave circuit applications such as high power solid state amplifiers, patch antennas, mobile base stations etc. Understanding the importance of indigenization of these strategic materials, DAE has developed a dimensionally stable, planar and isotropic PTFE/ceramic composite laminates.  Excellent RF performance was obtained in terms of output power, gain and efficiency during system level evaluation. Main properties of this developed substrate are given here.

RF Amplifier circuit fabricated using developed substrate

APPLICATIONS

The architecture of many passive and active RF and microwave devices uses flexible substrates as the basic building block. Flexible microwave substrates are extensively used for variety of high end microwave circuit applications such as high power solid state amplifiers, patch antennas, missile guidance, mobile base stations etc.

Main Properties of Developed Substrate

Sr No. Properties Value
1 Dielectric Constant (εr) at 10 GHz 4.3±0.08
2 Loss tangent (tan δ) at 10 GHz 0.002
3 Temperature coefficient of dielectric constant (τεr) (ppm/°C) 50
4 Moisture absorption (%) <0.07
5 Dielectric thickness (mm) 1.6
6 Cu-clad thickness (μm) 35
7 Coefficient of thermal expansion (ppm/°C) 24
8 Volume resistivity (Mohm cm) 106

MAJOR EQUIPMANTS

  • High Temperature Furnace, Sigma Mixer, Extruder, Calendering Machine, Multistation Thermolaminating Press, Vacuum laminating oress, D.M Water plant, Oven, Electronic Balance, Planetary Ball Mill and Plasma Etching machine.

MAJOR RAW MATERIALS

  • PTFE, Ceramic Filter, Mirofibre glass, Lubricant, Silane coupling agent, Copper foil, CF4 gas, O2 gas, Releasing film.

SPACE REQUIRED

  • The space requirement approximately Two rooms (10’’ x 12’) to comfortable accommodate the above equipments required for the development work .

MAN POWER REQUIREMENT

  • One experienced person qualified in Material Science, One electronics engineer having 2-3 years of experience in electronics hardware and software. One diploma in electronics person with 2-3 years of experience and one experienced technician.


Who Should apply


Interested parties with Engineering & Scientific knowledge, good financial background and adequate experience of products manufacturing & fabrication with technical capability in the area of interested technology and having or interested in setting –up facilities for production would be preferred.


How to apply

Send your Technology Transfer Application form duly filled and signed alongwith a Demand Draft/Bankers cheque of Rs. 500/- (for Indian entities) or US $50/- (for foreign entities) drawn in favour of “Accounts Officer, BARC” as application processing fee on following address: 

Head, Technology Transfer and Collaboration Division 
Bhabha Atomic Research Centre,
Trombay, Mumbai – 400 085, India.

Fax : +91-22-25505151


Note:Applications without processing fee as applicable above of Rs. 500/- or US $50/- for each technology will not be considered.


Click here for Technology Transfer Application Form

Contact Us

Head, 
Technology Transfer and Collaboration Division
Bhabha Atomic Research Centre,
Trombay, Mumbai 400 085.

Fax : 091-022- 25505151
Email : technology@barc.gov.in

How to apply

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